WebIf you are interested in this exciting opportunity, please send your CV, transcript of studies, and a brief cover letter highlighting your relevant experience and skills latest by 25th April to... WebHaarahiltunen, Antti & Varpula, Aapo & Savin, Hele. 2011. Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator. Journal of Applied Physics. P. 5. 0021-8979 (printed). DOI: 10.1063/1.3622511. Note: Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only.
Modeling of heterogeneous precipitation of iron in silicon - Aalto
WebJan 1, 2014 · Antti Haarahiltunen Elfys inc Marko Yli-Koski Hele Savin Aalto University Abstract and Figures We present here experimental results on the gettering of iron in Czochralski-grown silicon by... WebA. Haarahiltunen, a. H. Savin, M. Yli-Koski, H. Talvitie, and J. Sinkkonen. Helsinki University of Technology, P.O. Box 3500, Helsinki FI-02015 TKK, Finland. Received 5 July 2008; accepted 8 December 2008; published online 21 January 2009 We propose a quantitative model for phosphorus diffusion gettering PDG of iron in silicon, which the phoenix vs phoenix pro
Lauri Haarahiltunen - IMDb
WebOct 1, 2011 · Talvitie, Heli; Yli‐Koski, Marko; Haarahiltunen, Antti; Vähänissi, Ville; Asghar, Muhammad Imran; Savin, Hele 2011-10-01 00:00:00 We have studied iron distribution between a boron‐implanted (p+) layer and bulk defects in single crystalline silicon wafers after various gettering anneals. Our results show that iron accumulation into the p+ ... WebAntti Haarahiltunen Juha Heinonen Black silicon (b-Si) is an emerging material made by modifying silicon with nanostructures for improved photon detection. It has been … Web@MISC{Haarahiltunen07tkk-diss-2273, author = {Antti Haarahiltunen and Antti Haarahiltunen and Otamedia Oy}, title = {TKK-DISS-2273}, year = {2007}} Share. OpenURL . Abstract. Teknillinen korkeakoulu Sähkö- ja tietoliikennetekniikan osasto Mikro- ja nanotekniikan laboratorio Distribution: sick leave ihs